Model for distributed feedback Brillouin lasers
نویسندگان
چکیده
منابع مشابه
S-band multiwavelength Brillouin/Raman distributed Bragg reflector fiber lasers.
A multiwavelength Brillouin/Raman distributed Bragg reflector fiber laser operating in the S-band region is proposed and demonstrated. The laser uses a 7.7 km long dispersion-shifted fiber with an effective mode area of 15 μm(2) as the Brillouin and Raman gain media simultaneously. Two 1420 nm laser diodes with a combined power of 372 mW are used as pump sources, while a fiber Bragg grating wit...
متن کاملSelf-injected semiconductor distributed feedback lasers for frequency chirp stabilization.
It is well known that semiconductor distributed feedback lasers (DFB) are key devices for optical communications. However direct modulation applications are limited by the frequency chirp induced by current modulation. We demonstrate that a proper external control laser operation leads to chirp-to-power ratio (CPR) stabilization over a wide range of modulation frequencies as compared to the fre...
متن کاملProposed distributed feedback crystal cavities for x-ray lasers.
The strong interest in the coherent generation and guiding of x rays is well known. Many papers have recently appeared treating different concepts of stimulated x-ray emissions, 1-3 and x-ray guiding in thin films was achieved. 4 Crystals were suggested as end reflectors to generate feedback.' Here we suggest a different type of cavity using zeolite crystals that would guide the emitted x-rays ...
متن کاملSemiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gaincoupled optical feedback
Articles you may be interested in Picosecond laser dynamics of gaincoupled and indexcoupled InGaAs/InGaAlAs quantum well distributed feedback lasers Appl. Ultralow chirping short optical pulse (16 ps) generation in gaincoupled distributed feedback semiconductor lasers Appl.
متن کاملHeterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon
Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recent...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2013
ISSN: 1094-4087
DOI: 10.1364/oe.21.016191